APM2315AC-TU Просмотр технического описания (PDF) - Anpec Electronics

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APM2315AC-TU

P-Channel Enhancement Mode MOSFET

Anpec Electronics 

APM2315A

Electrical

Characteristics

(Cont.)

(T =

A

25°C

unless

otherwise

noted)

Symbol

Parameter

Test Condition

Dynamic Characteristics b

RG Gate Resistance

VGS=0V,VDS=0V,F=1MHz

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

VGS=0V,

VDS=-15V,

Frequency=1.0MHz

td(ON)

Tr

td(OFF)

Tf

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

VDD=-10V, RL=10Ω,

IDS=-1A, VGEN=-4.5V,

RG=6Ω

Notes:

a : Pulse test ; pulse width≤300µs, duty cycle≤2%.

b : Guaranteed by design, not subject to production testing.

APM2315A

Min. Typ. Max.

8

1135

200

110

6

12

7

14

72 131

45 82

Unit

Ω

pF

ns

Copyright © ANPEC Electronics Corp.

3

Rev. B.1 - Aug., 2005

www.anpec.com.tw

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