APM2313AC Просмотр технического описания (PDF) - Anpec Electronics

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Компоненты Описание

производитель

APM2313AC

P-Channel Enhancement Mode MOSFET

Anpec Electronics 

APM2313

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage

0.16

-ID=1.8A

0.15

0.14

0.13

0.12

0.11

0.10

0.09

0.08

0.07

0.06

1 2 3 4 5 6 7 8 9 10

-VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Junction Temperature

2.5

-VGS=4.5V

-ID=1.8A

2.0

1.5

1.0

0.5

0.0

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

5

-VDS=10V

-ID=1.8A

4

Gate Charge

3

2

1

0

0

1

2

3

4

5

6

QG - Gate Charge (nC)

Capacitance

600

Frequency=1MHz

500

Ciss

400

300

200

Coss

100

Crss

0

0

5

10

15

20

-VDS - Drain-to-Source Voltage (V)

Copyright  ANPEC Electronics Corp.

4

Rev. A.1 - Jun., 2003

www.anpec.com.tw

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