APM2313AC-TR Просмотр технического описания (PDF) - Anpec Electronics

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Компоненты Описание

производитель

APM2313AC-TR

P-Channel Enhancement Mode MOSFET

Anpec Electronics 

APM2313

Typical Characteristics

Output Characteristics

7

6

-VGS=3,4,5,6,7,8,9,10V

5

-VGS=2V

4

3

2

1

-VGS=1V

0

0

1

2

3

4

5

-VDS - Drain-to-Source Voltage (V)

Transfer Characteristics

7

6

5

TJ=25°C

4

3

2

TJ=125°C

1

TJ=-55°C

0

0.0

0.5

1.0

1.5

2.0

2.5

-VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.75

-IDS=250µA

1.50

1.25

1.00

0.75

0.50

0.25

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

On-Resistance vs. Drain Current

0.18

0.17

-VGS=2.5V

0.16

0.15

0.14

0.13

0.12

-VGS=4.5V

0.11

0.10

0.09

0.08

01234567

-ID - Drain Current (A)

Copyright  ANPEC Electronics Corp.

3

Rev. A.1 - Jun., 2003

www.anpec.com.tw

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