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MX28F2100B

2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY

Macronix International 

MX28F2100B

READ OPERATION

DC CHARACTERISTICS TA = 0oC TO 70oC, VCC = 5V ± 10%, VPP = GND to VCC

SYMBOL

ILI

PARAMETER

Input Leakage Current

MIN.

TYP

MAX.

1

UNIT

uA

ILO

Output Leakage Current

10

uA

IPP1

VPP Current

1

100

uA

ISB1

Standby VCC current

1

mA

ISB2

1

100

uA

ICC1

Operating VCC current

50

mA

ICC2

70

mA

VIL

Input Low Voltage

-0.3(NOTE 1)

0.8

V

VIH

Input High Voltage

2.0

VCC + 0.3 V

VOL

Output Low Voltage

0.45

V

VOH

Output High Voltage

2.4

V

CONDITIONS

VIN = GND to VCC

VOUT = GND to VCC

VPP = 5.5V

CE = VIH

CE = VCC + 0.3V

IOUT = 0mA, f=1MHz

IOUT = 0mA, f=10MHz

IOL = 2.1mA

IOH = -400uA

NOTES:

1. VIL min. = -1.0V for pulse width < 50 ns.

VIL min. = -2.0V for pulse width < 20 ns.

2. VIH max. = VCC + 1.5V for pulse width < 20 ns

If VIH is over the specified maximum value, read operation

cannot be guaranteed.

AC CHARACTERISTICS TA = 0oC to 70oC, VCC = 5V ± 10%, VPP = GND to VCC

28F2100B-70 28F2100B-90 28F2100B-12

SYMBOL PARAMETER

MIN. MAX. MIN. MAX. MIN. MAX. UNIT CONDITIONS

tACC

Address to Output Delay

70

90

120 ns CE=OE=VIL

tCE

CE to Output Delay

70

90

120 ns OE=VIL

tOE

OE to Output Delay

30

40

50 ns CE=VIL

tDF

OE High to Output Float (Note1)

0

20

0 30

0

30 ns CE=VIL

tOH

Address to Output hold

0

0

0

ns CE=OE=VIL

TEST CONDITIONS:

• Input pulse levels: 0.45V/2.4V

• Input rise and fall times: < 10ns

• Output load: 1 TTL gate + 35pF (Including scope and jig)

• Reference levels for measuring timing: 0.8V, 2.0V

NOTE:

1. tDF is defined as the time at which the output achieves the

open circuit condition and data is no longer driven.

P/N: PM0382

REV. 1.5, MAR. 24, 1998

13

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