AO4406A
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
1
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
±100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1.5 1.9 2.5
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
100
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=12A
TJ=125°C
9.5 11.5
mΩ
14
17
VGS=4.5V, ID=10A
12.5 15.5 mΩ
gFS
Forward Transconductance
VDS=5V, ID=12A
45
S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.75 1
V
IS
Maximum Body-Diode Continuous Current
4
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
610 760 910 pF
88 125 160 pF
40
70 100 pF
0.8 1.6 2.4
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
11
14
17
nC
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=15V, ID=12A
5
6.6
8
nC
1.9 2.4 2.9 nC
Qgd
Gate Drain Charge
1.8
3
4.2 nC
tD(on)
Turn-On DelayTime
4.4
ns
tr
Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.25Ω,
9
ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
17
ns
tf
Turn-Off Fall Time
6
ns
trr
Body Diode Reverse Recovery Time IF=12A, dI/dt=500A/µs
5.6
7
8
ns
Qrr
Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs
6.4
8
9.6 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
2/6
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