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AO3434

30V N-Channel MOSFET

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AO3434

30V N-Channel MOSFET

General Description

The AO3434 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications. It is ESD protected.

Features

VDS (V) = 30V

ID = 4.2A

RDS(ON) < 52mΩ

RDS(ON) < 75mΩ

(VGS = 10V)

(VGS = 10V)

(VGS = 4.5V)

ESD protected

D

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Maximum

Parameter

Symbol 10 sec

Steady-State

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

±20

Continuous Drain TA=25°C

Current A,F

TA=70°C

Pulsed Drain Current B

4.2

3.5

ID

3.3

2.8

IDM

30

Power Dissipation

TA=25°C

TA=70°C

1.4

1.0

PD

0.9

0.64

Junction and Storage Temperature Range TJ, TSTG

-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A

Maximum Junction-to-Lead C

t ≤ 10s

Steady-State

Steady-State

Symbol

RθJA

RθJL

Typ

70

100

63

Max

90

125

80

Units

V

V

A

W

°C

Units

°C/W

°C/W

°C/W

1/4

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