AO3414 Просмотр технического описания (PDF) - Unspecified
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AO3414 Datasheet PDF : 4 Pages
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AO3414
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO3414 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications. Standard Product AO3414 is Pb-free (meets ROHS & Sony 259 specifications). AO3414L
is a Green Product ordering option. AO3414 and AO3414L are electrically identical.
Features
VDS (V) = 20V
ID = 4.2 A (VGS = 4.5V)
RDS(ON) < 50mΩ (VGS = 4.5V)
RDS(ON) < 63mΩ (VGS = 2.5V)
RDS(ON) < 87mΩ (VGS = 1.8V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±8
4.2
3.2
15
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
70
100
Maximum Junction-to-Lead C
Steady-State
RθJL
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
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