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AO3404

N-Channel Enhancement Mode Field Effect Transistor

Unspecified 

AO3404

N-Channel Enhancement Mode Field

Effect Transistor

General Description

The AO3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This

device may be used as a load switch or in PWM applications.Standard Product AO3404 is Pb-free

(meets ROHS & Sony 259 specifications). AO3404L is a Green Product ordering option. AO3404 and

AO3404L are electrically identical.

Features

VDS (V) = 30V

ID = 5.8A (VGS = 10V)

RDS(ON) < 28mΩ (VGS = 10V)

RDS(ON) < 43mΩ (VGS = 4.5V)

TO-236

(SOT-23)

Top View

G

D

S

D

G

S

Absolute Maximum Ratings T A=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain TA=25°C

Current A

TA=70°C

ID

Pulsed Drain Current B

IDM

Power Dissipation

TA=25°C

TA=70°C

PD

Junction and Storage Temperature Range TJ, TSTG

Maximum

30

±20

5.8

4.9

20

1.4

1

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A

t ≤ 10s

Steady-State

RθJA

65

85

90

125

Maximum Junction-to-Lead C

Steady-State

RθJL

43

60

Units

V

V

A

W

°C

Units

°C/W

°C/W

°C/W

1/4

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