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HN58C257AT-85

256k EEPROM (32-kword × 8-bit) Ready/Busy and RES function (HN58C257A)

Hitachi -> Renesas Electronics 

HN58C256A Series, HN58C257A Series

Recommended DC Operating Conditions

Parameter

Symbol

Min

Typ

Supply voltage

Input voltage

Operating temperature

VCC

VSS

VIL

VIH

VH * 3

Topr

4.5

5.0

0

0

–0.3*1

—

2.2

—

VCC – 0.5 —

0

—

Notes: 1. VIL min: –1.0 V for pulse width ≤ 50 ns.

2. VIH max: VCC + 1.0 V for pulse width ≤ 50 ns.

3. This function is supported by only the HN58C257A series.

Max

Unit

5.5

V

0

V

0.8

V

VCC + 0.3*2 V

VCC + 1.0 V

70

°C

DC Characteristics (Ta = 0 to +70°C, VCC = 5.0 V±10%)

Parameter

Input leakage current

Output leakage current

Standby VCC current

Operating VCC current

Symbol Min

I LI

—

I LO

—

I CC1

—

I CC2

—

I CC3

—

—

Typ

Max

—

2*1

—

2

—

20

—

1

—

12

—

30

Output low voltage

VOL

—

—

0.4

Output high voltage

VOH

2.4

—

—

Note: 1. ILI on RES = 100 µA max (only the HN58C257A series)

Unit

µA

µA

µA

mA

mA

mA

V

V

Test conditions

VCC = 5.5 V, Vin = 5.5 V

VCC = 5.5 V, Vout = 5.5/0.4 V

CE = VCC

CE = VIH

Iout = 0 mA, Duty = 100%,

Cycle = 1 µs at VCC = 5.5 V

Iout = 0 mA, Duty = 100%,

Cycle = 85 ns at VCC = 5.5 V

IOL = 2.1 mA

IOH = –400 µA

Capacitance (Ta = +25°C, f = 1 MHz)

Parameter

Symbol

Min

Typ

Max

Input capacitance*1

Cin

—

—

6

Output capacitance*1

Cout

—

—

12

Note: 1. This parameter is periodically sampled and not 100% tested.

Unit Test conditions

pF Vin = 0 V

pF Vout = 0 V

5

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