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HN58C257A

256k EEPROM (32-kword × 8-bit) Ready/Busy and RES function (HN58C257A)

Hitachi -> Renesas Electronics 

HN58C256A Series

HN58C257A Series

256k EEPROM (32-kword × 8-bit)

Ready/Busy and RES function (HN58C257A)

ADE-203-410D (Z)

Rev. 4.0

Oct. 24, 1997

Description

The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as

32768-word × 8-bit. They have realized high speed low power consumption and high reliability by

employing advanced MNOS memory technology and CMOS process and circuitry technology. They also

have a 64-byte page programming function to make their write operations faster.

Features

• Single 5 V supply: 5 V ±10%

• Access time: 85 ns/100 ns (max)

• Power dissipation

 Active: 20 mW/MHz, (typ)

 Standby: 110 µW (max)

• On-chip latches: address, data, CE, OE, WE

• Automatic byte write: 10 ms max

• Automatic page write (64 bytes): 10 ms max

• Ready/Busy (only the HN58C257A series)

• Data polling and Toggle bit

• Data protection circuit on power on/off

• Conforms to JEDEC byte-wide standard

• Reliable CMOS with MNOS cell technology

• 105 erase/write cycles (in page mode)

• 10 years data retention

• Software data protection

• Write protection by RES pin (only the HN58C257A series)

• Industrial versions (Temperatur range: – 20 to 85˚C and – 40 to 85˚C) are also available.

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