RFP25N05 Просмотр технического описания (PDF) - Intersil
Номер в каталоге
Компоненты Описание
Список матч
RFP25N05 Datasheet PDF : 8 Pages
| |||
RFP25N05
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP25N05
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
50
50
±20
25
Refer to Peak Current Curve
Refer to UIS Curve
72
0.48
-55 to 175
300
260
V
V
V
A
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS ID = 250µA, VGS = 0V (Figure 11)
50
VGS(TH) VGS = VDS, ID = 250mA (Figure 10)
2
IDSS
VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS,TC = 150oC
-
IGSS
VGS = ±20V
-
rDS(ON) ID = 25A, VGS = 10V (Figure 9)
-
tON
VDD = 25V, ID ≈ 12.5A, RL = 2.0Ω,
-
td(ON)
VGS = 10V, RG = 10Ω
(Figure 13)
-
tr
-
td(OFF)
-
tf
-
tOFF
-
QG(TOT) VGS = 0V to 20V VDD = 40V,
-
QG(10)
VGS = 0V to 10V
ID = 25A, RL = 1.6Ω
Ig(REF) = 0.75mA
-
QG(TH) VGS = 0V to 2V
(Figure 13)
-
CISS
VDS = 25V, VGS = 0V,
-
f = 1MHz
COSS (Figure 12)
-
CRSS
-
RθJC
(Figure 3)
-
RθJA
-
-
-
-
-
-
-
-
14
30
45
22
-
-
-
-
1075
350
100
-
-
-
4
1
25
±100
0.047
60
-
-
-
-
100
80
45
3
-
-
-
2.083
80
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
oC/W
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 25A
-
-
1.5
V
Reverse Recovery Time
tRR
ISD = 25A, dISD/dt = 100A/µs
-
-
125
ns
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
4-505
Share Link: 