HN29W25611T-50 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HN29W25611T-50

256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

Hitachi -> Renesas Electronics 

HN29W25611 Series

• Erase mode

 Single sector erase ((2048 + 64) byte unit)

• Fast serial read access time:

 First access time: 50 µs (max)

 Serial access time: 50 ns (max)

• Low power dissipation:

 ICC2 = 50 mA (max) (Read)

 ISB2 = 50 µA (max) (Standby)

 ICC3/ICC4 = 40 mA (max) (Erase/Program)

 ISB3 = 5 µA (max) (Deep standby)

• The following architecture is required for data reliability.

 Error correction: more than 3-bit error correction per each sector read

 Spare sectors: 1.8% (290 sectors) within usable sectors

Ordering Information

Type No.

HN29W25611T-50

Available sector

More than 16,057 sectors

Package

12.0 × 18.40 mm2 0.5 mm pitch

48-pin plastic TSOP I (TFP-48D)

2

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