W49F020Q-90 Просмотр технического описания (PDF) - Winbond

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W49F020Q-90

256K x 8 CMOS FLASH MEMORY

Winbond 

Preliminary W49F020

Power-up Timing

PARAMETER

Power-up to Read Operation

Power-up to Write Operation

CAPACITANCE

(VDD = 5.0V, TA = 25° C, f = 1 MHz)

PARAMETER

I/O Pin Capacitance

Input Capacitance

SYMBOL

CI/O

CIN

SYMBOL

TPU. READ

TPU. WRITE

CONDITIONS

VI/O = 0V

VIN = 0V

TYPICAL

100

5

MAX.

12

6

AC CHARACTERISTICS

AC Test Conditions

PARAMETER

Input Pulse Levels

Input Rise/Fall Time

Input/Output Timing Level

Output Load

CONDITIONS

0V to 3.0V

< 5 nS

1.5V/1.5V

1 TTL Gate and CL = 100 pF for 90nS

CL = 30 pF for 70nS

AC Test Load and Waveform

+5V

UNIT

µS

mS

UNIT

pf

pf

D OUT

30 pF for 70nS

100 pF for 90nS

(Including Jig and

Scope)

1.8K Ω

1.3K Ω

Input

3V

0V

1.5V

Test Point

Output

1.5V

Test Point

- 11 -

Publication Release Date: October 1999

Revision A1

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