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W49F201S-55

128K x 16 CMOS FLASH MEMORY

Winbond 

Preliminary W49F201

128K × 16 CMOS FLASH MEMORY

GENERAL DESCRIPTION

The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The

device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is

not required. The unique cell architecture of the W49F201 results in fast program/erase operations

with extremely low current consumption (compared to other comparable 5-volt flash memory

products). The device can also be programmed and erased using standard EPROM programmers.

FEATURES

• Single 5-volt operations:

− 5-volt Read/Erase/Program

• Fast Program operation:

− Word-by-Word programming: 50 µS (max.)

• Fast Erase operation: 60 mS (typ.)

• Fast Read access time: 45/55 nS

• Endurance: 1K/10K cycles (typ.)

• Ten-year data retention

• Hardware data protection

• Sector configuration

− One 8K words boot block with lockout

protection

− Two 8K words parameter blocks

− One 104K words (208K bytes) Main Memory

Array Blocks

• Low power consumption

− Active current: 25 mA (typ.)

− Standby current: 20 µA (typ.)

• Automatic program and erase timing with

internal VPP generation

• End of program or erase detection

− Toggle bit

− Data polling

• Latched address and data

• TTL compatible I/O

• JEDEC standard word-wide pinouts

• Available packages: 44-pin SOP, 48-pin TSOP

Publication Release Date: June 1999

-1-

Revision A1

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