W49F201T-55 Просмотр технического описания (PDF) - Winbond

Номер в каталоге

Компоненты Описание

Список матч

W49F201T-55

128K x 16 CMOS FLASH MEMORY

Winbond 

Preliminary W49F201

DC CHARACTERISTICS

Absolute Maximum Ratings

PARAMETER

Power Supply Voltage to Vss Potential

Operating Temperature

Storage Temperature

D.C. Voltage on Any Pin to Ground Potential except OE

Transient Voltage (<20 nS ) on Any Pin to Ground Potential

Voltage on OE Pin to Ground Potential

RATING

-0.5 to +7.0

0 to +70

-65 to +150

-0.5 to VDD +1.0

-1.0 to VDD +1.0

-0.5 to 12.5

UNIT

V

°C

°C

V

V

V

Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the

device.

DC Operating Characteristics

(VDD = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C)

PARAMETER SYM.

TEST CONDITIONS

LIMITS

UNIT

MIN. TYP. MAX.

Power Supply

Current

ICC CE=OE= VIL, WE= VIH, all DQs open - 25

50

mA

Address inputs = VIL/VIH, at f = 5 MHz

Standby VDD

Current (TTL input)

ISB1 CE = VIH, all DQs open

Other inputs = VIL/VIH

-2

3

mA

Standby VDD

Current

(CMOS input)

ISB2 CE = VDD -0.3V, all DQs open

Other inputs = VDD -0.3V/GND

- 20

100

µA

Input Leakage

Current

ILI VIN = GND to VDD

--

10

µA

Output Leakage

Current

ILO VOUT = GND to VDD

--

10

µA

Input Low Voltage

VIL

-

-0.3 -

0.8

V

Input High Voltage VIH

-

2.0 - VDD +0.5 V

Output Low Voltage VOL IOL = 2.1 mA

--

0.45

V

Output High Voltage VOH IOH = -0.4 mA

2.4 -

-

V

- 12 -

Publication Release Date: June 1999

Revision A1

Share Link: