UPD43256BGU-70L-A Просмотр технического описания (PDF) - NEC => Renesas Technology

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UPD43256BGU-70L-A

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT 85ns

NEC => Renesas Technology 

μPD43256B

Low VCC Data Retention Characteristics (TA = 0 to 70 °C)

Parameter

Symbol

Test Condition

μPD43256B-xxL

μPD43256B-xxLL

Unit

μPD43256B-Axx

μPD43256B-Bxx

Data retention supply voltage VCCDR /CS ≥ VCC − 0.2 V

Data retention supply current ICCDR VCC = 3.0 V, /CS ≥ VCC − 0.2 V

Chip deselection

tCDR

to data retention mode

Operation recovery time

tR

Notes 1. 3 μA (TA ≤ 40 °C)

2. 2 μA (TA ≤ 40 °C), 1 μA (TA ≤ 25 °C)

MIN. TYP. MAX. MIN. TYP. MAX.

2.0

5.5

2.0

5.5

V

0.5

20 Note1

0.5

7 Note2

μA

0

0

ns

5

5

ms

Data Retention Timing Chart

tCDR

Data retention mode

tR

VCC

4.5 VNote

VIH (MIN.)

VCCDR (MIN.)

VIL (MAX.)

GND

/CS

/CS ≥ VCC – 0.2 V

Note A version : 3.0 V, B version : 2.7 V

Remark The other pins (Address, /OE, /WE, I/O) can be in high impedance state.

Data Sheet M10770EJEV0DS

17

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