AS5SS256K36ADQ-8.5/IT(2003) Просмотр технического описания (PDF) - Austin Semiconductor

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AS5SS256K36ADQ-8.5/IT
(Rev.:2003)

256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM

Austin Semiconductor 

Austin Semiconductor, Inc.

SSRAM

AS5SS256K36 &

AS5SS256K36A

IDD OPERATING CONDITIONS AND MAXIMUM LIMITS

(-55oC to +125oC or -40oC to +85oC)






 

  

  

  

      



   

      

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CAPACITANCE

DESCRIPTION

Control Input Capacitance

Input/Output Capacitance (DQ)

Address Capacitance

Clock Capacitance

CONDITIONS

TA = 25oC; f = 1MHz;

VDD = 3.3V

SYM

CI

CO

CA

CCK

MAX

4

5

3.5

3.5

UNITS

pF

pF

pF

pF

NOTES

4

4

4

4

NOTES:

1. I is specified with no output current and increases with faster cycle times. I Q increases with faster cycle times and

DD

DD

greater output loading.

2. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means device

is active (not in power-down mode).

3. A typical value is measured at 3.3V, 25oC and 15ns cycle time.

4. This parameter is sampled.

AS5SS256K36 &

AS5SS256K36A

Rev. 3.5 2/03

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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