HN58S256AT-15 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HN58S256AT-15

256 k EEPROM (32-kword × 8-bit)

Hitachi -> Renesas Electronics 

HN58S256A Series

256 k EEPROM (32-kword × 8-bit)

ADE-203-692B (Z)

Rev. 2.0

Nov. 1997

Description

The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-

word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry

technology. It also has a 64-byte page programming function to make the write operations faster.

Features

• Single supply: 2.2 to 3.6 V

• Access time: 150 ns (max)/200 ns (max)

• Power dissipation:

 Active: 10 mW/MHz, (typ)

 Standby: 36 µW (max)

• On-chip latches: address, data, CE, OE, WE

• Automatic byte write: 15 ms (max)

• Automatic page write (64 bytes): 15 ms (max)

• Data polling and Toggle bit

• Data protection circuit on power on/off

• Conforms to JEDEC byte-wide standard

• Reliable CMOS with MNOS cell technology

• 105 erase/write cycles (in page mode)

• 10 years data retention

• Software data protection

• Industrial versions (Temperatur range:–40 to 85˚C) are also available.

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