HN58S256AT-20 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HN58S256AT-20

256 k EEPROM (32-kword × 8-bit)

Hitachi -> Renesas Electronics 

HN58S256A Series

Functional Description

Automatic Page Write

Page-mode write feature allows 1 to 64 bytes of data to be written into the EEPROM in a single write

cycle. Following the initial byte cycle, an additional 1 to 63 bytes can be written in the same manner.

Each additional byte load cycle must be started within 30 µs from the preceding falling edge of WE or

CE. When CE or WE is high for 100 µs after data input, the EEPROM enters write mode automatically

and the input data are written into the EEPROM.

Data Polling

Data polling allows the status of the EEPROM to be determined. If EEPROM is set to read mode during

a write cycle, an inversion of the last byte of data to be loaded outputs from I/O7 to indicate that the

EEPROM is performing a write operation.

WE, CE Pin Operation

During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the

rising edge of WE or CE.

Write/Erase Endurance and Data Retention Time

The endurance is 105 cycles in case of the page programming and 104 cycles in case of the byte

programming (1% cumulative failure rate). The data retention time is more than 10 years when a device is

page-programmed less than 104 cycles.

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