ALD110814PC(2005) Просмотр технического описания (PDF) - Advanced Linear Devices
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ALD110814PC
(Rev.:2005)
(Rev.:2005)
Advanced Linear Devices
ALD110814PC Datasheet PDF : 2 Pages
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ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
Gate-Source voltage, VGS
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
10.6V
10.6V
500 mW
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = GND TA = 25°C unless otherwise specified
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD110814 / ALD110914
Parameter
Gate Threshold Voltage
Offset Voltage
VGS(th)1-VGS(th)2
Offset VoltageTempco
GateThreshold Voltage Tempco
Symbol
VGS(th)
VOS
TC ∆VOS
TC∆VGS(th)
Min
1.38
On Drain Current
IDS (ON)
Typ
1.40
3
5
-1.7
0.0
+1.6
12.0
3.0
Max
1.42
10
Forward Transconductance
GFS
1.4
Transconductance Mismatch
∆GFS
1.8
Output Conductance
GOS
68
Drain Source On Resistance
RDS (ON)
500
Drain Source On Resistance
∆RDS (ON)
0.5
Mismatch
Drain Source Breakdown Voltage BVDSX
10
Drain Source Leakage Current1
IDS (OFF)
Gate Leakage Current1
IGSS
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
CISS
CRSS
ton
toff
10
100
4
3
30
1
2.5
0.1
10
10
60
Notes: 1 Consists of junction leakage currents
ALD110814/ALD110914
Advanced Linear Devices
Unit
V
mV
µV/ °C
mV °C
mA
mmho
%
µmho
Ω
%
V
pA
nA
pA
nA
pF
pF
ns
ns
dB
Test Conditions
IDS =1µA
VDS = 0.1V
IDS =1µA
VDS1 = VDS2
ID = 1µA
ID = 20µA, VDS = 0.1V
ID = 40µA
VGS = +10.6V
VGS = + 5.4V
VDS = + 5V
VGS = +5.4V
VDS = +10.4V
VGS = + 5.4V
VDS = +10.4V
VDS = 0.1V
VGS = +4.0V
VDS = 0.1V
VGS = +5.4V
IDS = 1.0µA
VGS = -0.4V
VGS = +0.4V
VDS =10V, TA = 125°C
VDS = 0V VGS = 10V
TA =125°C
V+ = 5V RL= 5KΩ
V+ = 5V RL= 5KΩ
f = 100KHz
2
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