ALD110808 Просмотр технического описания (PDF) - Advanced Linear Devices

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ALD110808

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY

Advanced Linear Devices 

TYPICAL PERFORMANCE CHARACTERISTICS (cont.)

TRANCONDUCTANCE vs.

DRAIN-SOURCE ON CURRENT

1.2

TA = +25°C

VDS = +10V

0.9

0.6

0.3

0.0

0

2

4

6

8

10

DRAIN-SOURCE ON CURRENT (mA)

NORMALIZED SUBTHRESHOLD

CHARACTERISTICS RELATIVE TO

GATE THRESHOLD VOLTAGE

0.3

0.2

VDS = +0.1V

0.1

0

-0.1

-0.2

-0.3

+55°C

+25°C

-0.4

10000 1000

100

10

1

0.1

DRAIN-SOURCE ON CURRENT (nA)

THRESHOLD VOLTAGE vs.

AMBIENT TEMPERATURE

4.0

3.0

IDS = +1µA

VDS = +0.1V

2.0

1.0

Vt = 0.0V

0.0

Vt = +0.2V

Vt = +1.4V

Vt = +0.8V

Vt = +0.4V

-50 -25 0 25 50 75 100 125

AMBIENT TEMPERATURE (°C)

SUBTHRESHOLD FORWARD

TRANSFER CHARACTERISTICS

2.0

1.0

IDS = +1µA

VDS = +0.1V

0.0

VGS(th) = 0.0V

-1.0

-2.0

VGS(th) = -0.4V

VGS(th) = -1.3V

-3.0

VGS(th) = -3.5V

-4.0

-25

25

75

125

AMBIENT TEMPERATURE (°C)

ALD110808A/ALD110808/

ALD110908A/ALD110908, Vers. 2.3

Advanced Linear Devices

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