HN27C256AP-12 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталоге

Компоненты Описание

Список матч

HN27C256AP-12

32768-word × 8-bit CMOS One Time Electrically Programmable ROM

Hitachi -> Renesas Electronics 

HN27C256AP/AFP Series

DC Characteristics (Ta = 25°C ± 5°C, VCC = 6 V ± 0.25 V, VPP = 12.5 V ± 0.5 V)

Parameter

Symbol Min

Typ

Max

Unit

Test Conditions

Input leakage current

I LI

—

—

2

µA

Vin = 0 V to VCC

VPP supply current

I PP

—

—

30

mA

CE = VIL

Operating VCC current

I CC

—

—

30

mA

Input low level

VIL

–0.1*5

—

0.8

V

Input high level

VIH

2.2

—

VCC + 0.5*6 V

Output low voltage during verify VOL

—

—

0.45

V

IOL = 2.1 mA

Output high voltage during verify VOH

2.4

—

—

V

IOH = –400 µA

Notes: 1. VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP.

2. VPP must not exceed 13.5 V including overshoot.

3. An influence may be had upon device reliability if the device is installed or removed while VPP = 12.

5V.

4. Do not alter VPP either VIL to 12.5 V or 12.5 V or 12.5 V to VIL when CE = Low.

5. VIL min = –0.6 V for pulse width ≤ 20 ns.

6. If VIH is over the specified maximum value, programming operation cannot be guaranteed.

8

Share Link: