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IDT7MP4145S20Z

256K x 32 CMOS STATIC RAM MODULE

Integrated Device Technology 

IDT7MP4045/7MP4145

256K x 32 CMOS STATIC RAM MODULE

DC ELECTRICAL CHARACTERISTICS

(VCC = 5.0V ±10%, TA = 0°C to +70°C)

Symbol

Parameter

Test Conditions

|ILI|

Input Leakage

(Address and Control)

VCC = Max.; VIN = GND to VCC

|ILI|

Input Leakage (Data)

VCC = Max.; VIN = GND to VCC

|ILO|

Output Leakage

VCC = Max.; CS = VIH, VOUT = GND to VCC

VOL

Output LOW

VCC = Min., IOL = 8mA

VOH

Output HIGH

VCC = Min., IOH = –4mA

COMMERCIAL TEMPERATURE RANGE

Min.

—

—

—

—

2.4

Max.

80

10

10

0.4

—

Unit

µA

µA

µA

V

V

2703 tbl 07

Symbol

ICC

ISB

ISB1

Parameter

Dynamic Operating

Current

Standby Supply

Current

Full Standby

Supply Current

Test Conditions

f = fMAX; CS = VIL

VCC = Max.; Output Open

CS ≥ VIH, VCC = Max.

Outputs Open, f = fMAX

CS ≥ VCC – 0.2V; f = 0

VIN > VCC – 0.2V or < 0.2V

Max.

1360

480

120

Unit

mA

mA

mA

2703 tbl

AC TEST CONDITIONS

Input Pulse Levels

Input Rise/Fall Times

Input Timing Reference Levels

Output Reference Levels

Output Load

GND to 3.0V

5ns

1.5V

1.5V

See Figures 1-4

2703 tbl 09

+5 V

DATAOUT

255Ω

480 Ω

30 pF*

DATAOUT

255Ω

+5 V

480 Ω

5 pF*

*Includes scope and jig.

Figure 1. Output Load

2703 drw 03

15.2

Figure 2. Output Load

(for tOLZ,tOHZ, tCHZ, tCLZ, tWHZ, tOW)

2703 drw 04

3

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