ADP3625 Просмотр технического описания (PDF) - Analog Devices

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ADP3625

High Speed, Dual, 4 A MOSFET Driver with Thermal Protection

Analog Devices 

ADP3623/ADP3624/ADP3625/ADP3633/ADP3634/ADP3635

ABSOLUTE MAXIMUM RATINGS

Table 2.

Parameter

VDD

OUTA, OUTB

DC

<200 ns

INA, INA, INB, INB, and SD

ESD

Human Body Model (HBM)

Field Induced Charged Device Model

(FICDM)

SOIC_N_EP

MINI_SO_EP

θJA, JEDEC 4-Layer Board

SOIC_N_EP1

MINI_SO_EP1

Junction Temperature Range

Storage Temperature Range

Lead Temperature

Soldering (10 sec)

Vapor Phase (60 sec)

Infrared (15 sec)

Rating

−0.3 V to +20 V

−0.3 V to VDD + 0.3 V

−2 V to VDD + 0.3 V

−0.3 V to VDD + 0.3 V

3.5 kV

1.5 kV

1.0 kV

59°C/W

43°C/W

−40°C to +150°C

−65°C to +150°C

300°C

215°C

260°C

1 θJA is measured per JEDEC standards, JESD51-2, JESD51-5, and JESD51-7, as

appropriate with the exposed pad soldered to the PCB.

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

ESD CAUTION

Rev. A | Page 6 of 16

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