ADP2380AREZ-R7 Просмотр технического описания (PDF) - Analog Devices
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ADP2380AREZ-R7 Datasheet PDF : 28 Pages
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Data Sheet
ADP2380
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25oC, VIN = 12 V, VOUT = 3.3 V, L = 4.7 µH, COUT = 2 × 100 µF, fSW = 500 kHz, unless otherwise noted.
100
100
95
95
90
90
85
85
80
80
75
75
70
70
65
60
55
INDUCTOR: FDVE1040-3R3M
MOSFET: FDS6298
50
VOUT = 1.2V
VOUT = 1.8V
VOUT = 2.5V
VOUT = 3.3V
VOUT = 5V
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
OUTPUT CURRENT (A)
Figure 4. Efficiency at VIN = 12 V, fSW = 500 kHz
65
60
55
INDUCTOR: FDVE1040-6R8M
MOSFET: FDS6298
VOUT = 1.2V
VOUT = 1.8V
VOUT = 2.5V
VOUT = 3.3V
VOUT = 5V
50
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
OUTPUT CURRENT (A)
Figure 7. Efficiency at VIN = 12 V, fSW = 250 kHz
100
95
90
85
80
75
70
65
60
55
INDUCTOR: FDVE1040-4R7M
MOSFET: FDS6298
VOUT = 1.8V
VOUT = 2.5V
VOUT = 3.3V
VOUT = 5V
50
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
OUTPUT CURRENT (A)
Figure 5. Efficiency at VIN = 18 V, fSW = 500 kHz
100
95
90
85
80
75
70
65
60
55
50
0
INDUCTOR: FDVE1040-1R5M
MOSFET: FDS6298
VOUT = 1.0V
VOUT = 1.2V
VOUT = 1.5V
VOUT = 1.8V
VOUT = 2.5V
VOUT = 3.3V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
OUTPUT CURRENT (A)
Figure 8. Efficiency at VIN = 5 V, fSW = 500 kHz
160
TJ = –40°C
TJ = +25°C
150
TJ = +125°C
3.2
TJ = –40°C
TJ = +25°C
3.0
TJ = +125°C
140
2.8
130
2.6
120
2.4
110
2.2
100
2.0
90
4
6
8
10
12
14
16
18
20
INPUT VOLTAGE (V)
Figure 6. Shutdown Current vs. VIN
1.8
4
6
8
10
12
14
16
18
20
INPUT VOLTAGE (V)
Figure 9. Quiescent Current vs. VIN
Rev. 0 | Page 7 of 28
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