EV-ADF4159EB3Z Просмотр технического описания (PDF) - Analog Devices

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EV-ADF4159EB3Z

Direct Modulation/Fast Waveform Generating, 13 GHz, Fractional-N Frequency Synthesizer

Analog Devices 

ADF4159

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, GND = AGND = DGND = SDGND = CPGND =

0 V, unless otherwise noted.

Table 4.

Parameter

AVDD to GND

DVDD to GND

VP to GND

VP to AVDD

Digital I/O Voltage to GND

Analog I/O Voltage to GND

REFIN to GND

RFIN to GND

Operating Temperature Range,

Industrial

Storage Temperature Range

Maximum Junction Temperature

Reflow Soldering

Peak Temperature

Time at Peak Temperature

ESD

Charged Device Model

Human Body Model

Rating

−0.3 V to +3.9 V

−0.3 V to +2.4 V

−0.3 V to +3.9 V

−0.3 V to +0.3 V

−0.3 V to DVDD + 0.3 V

−0.3 V to AVDD + 0.3 V

−0.3 V to DVDD + 0.3 V

−0.3 V to AVDD + 0.3 V

−40°C to +125°C

−65°C to +125°C

150°C

260°C

40 sec

1000 V

3000 V

Data Sheet

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

THERMAL RESISTANCE

Thermal impedance (θJA) is specified for a device with the

exposed pad soldered to AGND.

Table 5. Thermal Resistance

Package Type

θJA

24-Lead LFCSP_WQ

30.4

Unit

°C/W

ESD CAUTION

Rev. B | Page 6 of 36

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