P4C198 Просмотр технического описания (PDF) - Performance Semiconductor

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P4C198

ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS

Performance Semiconductor 

P4C198/198L, P4C198A/198AL

TRUTH TABLES

P4C198/L

CE WE OE

HX

X

LH H

LH

L

L

L

X

Mode

Standby

Output Inhibit

READ

WRITE

Output

High Z

High Z

DOUT

DIN

P4C198A/L

CE1 CE2 WE OE

HX

XX

XH

X

X

L

L

HH

L

L

HL

LL

LX

Mode

Standby

Standby

Output Inhibit

READ

WRITE

Output

High Z

High Z

High Z

DOUT

DIN

AC TEST CONDITIONS

Input Pulse Levels

Input Rise and Fall Times

Input Timing Reference Level

Output Timing Reference Level

Output Load

GND to 3.0V

3ns

1.5V

1.5V

See Figures 1 and 2

Figure 1. Output Load

* including scope and test fixture.

Note:

Because of the ultra-high speed of the P4C198/L and P4C198A/L, care

must be taken when testing this device; an inadequate setup can cause

a normal functioning part to be rejected as faulty. Long high-inductance

leads that cause supply bounce must be avoided by bringing the VCC and

ground planes directly up to the contactor fingers. A 0.01 µF high

Figure 2. Thevenin Equivalent

frequency capacitor is also required between VCC and ground. To avoid

signal reflections, proper termination must be used; for example, a 50Ω

test environment should be terminated into a 50Ω load with 1.73V

(Thevenin Voltage) at the comparator input, and a 116Ω resistor must

be used in series with DOUT to match 166Ω (Thevenin Resistance).

Document # SRAM113 REV A

Page 8 of 13

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