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HM514400BTT-8

1,048,576-word × 4-bit Dynamic Random Access Memory

Hitachi -> Renesas Electronics 

HM514400B/BL, HM514400C/CL Series

DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V)

HM514400B/BL, HM514400C/CL

-6

-7

-8

Parameter

Operating current

Standby current

Symbol

ICC1

ICC2

Min Max Min Max Min Max Unit Test conditions

— 110 — 100 — 90 mA RAS, CAS cycling

tRC = min

—2

—2

—2

mA TTL interface

RAS, CAS = VIH

Dout = High-Z

Notes

1, 2

—1

—1

—1

mA CMOS interface

RAS, CAS

≥ VCC – 0.2 V

Dout = High-Z

Standby current

(L-version)

ICC2

— 100 — 100 — 100 µA CMOS interface

4

RAS, CAS =VIH

WE, OE, Address and

Din = VIH or VIL

Dout = High-Z

RAS-only

refresh current

Standby current

ICC3

— 110 — 100 — 90 mA tRC = min

2

ICC5

— 5 — 5 — 5 mA RAS = VIH, CAS = VIL 1

Dout = enable

CAS-before-RAS

refresh current

ICC6

— 110 — 100 — 90 mA tRC = min

Fast page mode

ICC7

— 110 — 100 — 90 mA tPC = min

1, 3

current

Battery back up

current

(Standby with

CBR refresh)

(L-version)

ICC10

— 200 — 200 — 200 µA tRC = 125 µs

4

tRAS ≤ 1 µs

WE = VIH, CAS = VIL

OE, Address and

Din = VIH or VIL

Dout = High-Z

Input leakage current ILI

Output leakage

ILO

current

–10 10 –10 10 –10 10 µA 0 V ≤ Vin ≤ 7 V

–10 10 –10 10 –10 10 µA 0 V ≤ Vout ≤ 7 V

Dout = disable

Output high voltage VOH

2.4 VCC 2.4 VCC 2.4 VCC V High Iout = –5 mA

Output low voltage

VOL

0 0.4 0 0.4 0 0.4 V Low Iout = 4.2 mA

Notes: 1. ICC depends on output load condition when the device is selected. ICC max is specified at the

output open condition.

2. Address can be changed twice or less while RAS = VIL.

3. Address can be changed once or less while CAS = VIH.

4. VCC – 0.2 V ≤ VIH ≤ 6.5 V and 0 V ≤ VIL ≤ 0.2 V.

7

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