HM514400CZ-6 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HM514400CZ-6

1,048,576-word × 4-bit Dynamic Random Access Memory

Hitachi -> Renesas Electronics 

Read-Modify-Write Cycle

Parameter

Read-modify-write cycle time

RAS to WE delay time

CAS to WE delay time

Column address to WE delay time

OE hold time from WE

HM514400B/BL, HM514400C/CL Series

HM514400B/BL, HM514400C/CL

-6

-7

-8

Symbol Min Max Min Max Min Max Unit Notes

tRWC

tRWD

tCWD

tAWD

tOEH

150 — 180 — 200 — ns

80 — 95 — 105 — ns 10

35 — 45 — 45 — ns 10

50 — 60 — 65 — ns 10

15 — 20 — 20 — ns

Refresh Cycle

HM514400B/BL, HM514400C/CL

-6

-7

-8

Parameter

Symbol Min

CAS setup time (CBR refresh cycle) tCSR

10

CAS hold time (CBR refresh cycle) tCHR

10

RAS precharge to CAS hold time

tRPC

10

CAS precharge time in normal mode tCPN

10

Max Min

— 10

— 10

— 10

— 10

Max Min

— 10

— 10

— 10

— 10

Max Unit Notes

— ns

— ns

— ns

— ns

Fast Page Mode Cycle

HM514400B/BL, HM514400C/CL

-6

-7

-8

Parameter

Symbol Min Max Min Max Min Max Unit Notes

Fast page mode cycle time

tPC

40 — 45 — 50 — ns

Fast page mode CAS precharge time tCP

10 — 10 — 10 — ns

Fast page mode RAS pulse width

tRASC — 100000 — 100000 — 100000 ns 12

Access time from CAS precharge

tACP

— 35 — 40 — 45 ns 3, 13,

17

RAS hold time from CAS precharge tRHCP 35 — 40 — 45 — ns

11

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