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ACT-E1M32 Просмотр технического описания (PDF) - Aeroflex Corporation

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ACT-E1M32 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
AC Characteristics – Write/Erase/Program Operations, CE Controlled
(TA = -55°C to +125°C, VCC = +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)
Parameter
Symbol
JEDEC
Standard
+3.3V
VCC (2)
Typical
120nS
+4.5V to +5.5V VCC
80nS
100nS
120nS
Min Max Min Max Min Max Min Max
Write Cycle Time
RP High Recovery to CE Low
tAVAV
120
80
100
120
tPHEL
1.5
.45
.45
.45
WE Setup to CE Going Low
tWLEL
0
0
0
0
Boot Block Unlock Setup to CE Going High (1)
tPHHEH
200
100
100
100
VPP Setup to CE Going High (1)
tVPEH
200
100
100
100
Address Setup to CE Going High
tAVEH
90
60
60
60
Data Setup to CE Going High
tDVEH
70
60
60
60
CE Pulse Width
tELEH
90
60
60
60
Data Hold Time from CE High
tEHDX
0
0
0
0
Address Hold Time from CE High
tEHAX
0
0
0
0
WE Hold Time from CE High
tEHWH
0
0
0
0
CE Pulse Width High
tEHEL
20
20
20
20
Duration of Word Write Operation (1) (x32)
tEHQV1
6
6
6
6
Duration of Erase Operation (Boot) (1)
tEHQV2
0.3
0.3
0.3
0.3
Duration of Erase Operation (Parameter) (1)
tEHQV3
0.3
0.3
0.3
0.3
Duration of Erase Operation (Main) (1)
tEHQV4
0.6
0.6
0.6
0.6
VPP Hold from Valid SRD (1)
tQVVL
0
0
0
0
RP VHH Hold from Valid SRD (1)
tQVPH
0
0
0
0
Boot Block Lock Delay (1)
tPHBR
200
100
100
100
NOTES:
1. Sampled, but not 100% tested.
2. Performance at VCC = +4.5V to +5.5V is guaranteed. Performance at VCC = +3.3V is typical (Not Tested).
Units
nS
µS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
µS
Sec
Sec
Sec
nS
nS
nS
AC Characteristics – Read Only Operations
(TA = -55°C to +125°C, VCC = +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)
Parameter
Symbol
JEDEC
Standard
+3.3V
VCC (2)
Typical
120nS
Min Max
+4.5V to +5.5V VCC
80nS
Min Max
100nS
Min Max
120nS
Min Max
Read Cycle Time
tAVAV
120
80
100
120
Address to Output Delay
tAVQV
120
80
100
120
CE to Output Delay
tELQV
120
80
100
120
RP to Output Delay
tPHQV
1.5
.45
.45
.45
OE to Output Delay
tGLQV
65
40
40
40
CE to Output in Low Z (1)
tELQX
0
0
0
0
CE to Output in High Z (1)
tEHQZ
55
30
30
30
OE to Output in Low Z (1)
tGLQX
0
0
0
0
OE to Output in High Z (1)
tGHQZ
45
30
30
30
Output Hold from Address, CE, or OE Change,
Whichever Occurs First (1)
tOH
0
0
0
0
Notes:
1. Guaranteed by design, but not tested.
2. Performance at VCC = +4.5V to +5.5V is guaranteed. Performance at VCC = +3.3V is typical (Not Tested).
Units
nS
nS
nS
µS
nS
nS
nS
nS
nS
nS
Aeroflex Circuit Technology
5
SCD1661B REV A 1/16/97 Plainview NY (516) 694-6700

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