GS88036AT-133I Просмотр технического описания (PDF) - Giga Semiconductor

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производитель

GS88036AT-133I

512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs

Giga Semiconductor 

GS88018/32/36AT-250/225/200/166/150/133

Absolute Maximum Ratings

(All voltages reference to VSS)

Symbol

Description

Value

Unit

VDD

Voltage on VDD Pins

–0.5 to 4.6

V

VDDQ

Voltage in VDDQ Pins

–0.5 to 4.6

V

VCK

Voltage on Clock Input Pin

–0.5 to 6

V

VI/O

Voltage on I/O Pins

–0.5 to VDDQ +0.5 (≤ 4.6 V max.)

V

VIN

Voltage on Other Input Pins

–0.5 to VDD +0.5 (≤ 4.6 V max.)

V

IIN

Input Current on Any Pin

IOUT

Output Current on Any I/O Pin

+/–20

mA

+/–20

mA

PD

Package Power Dissipation

1.5

W

TSTG

Storage Temperature

–55 to 125

oC

TBIAS

Temperature Under Bias

–55 to 125

oC

Note:

Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended

Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of

this component.

Rev: 1.02 9/2002

11/26

© 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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