RMWD24001 Просмотр технического описания (PDF) - Raytheon Company
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RMWD24001 Datasheet PDF : 7 Pages
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RMWD24001
21-26.5 GHz Driver Amplifier MMIC
Application
Information
Figure 1
Functional
Block Diagram
PRODUCT INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typically 2 mil between the chip and the substrate material.
Drain Supply
Vd1
Drain Supply
Vd2
Drain Supply Drain Supply
Vd3
Vd4
MMIC Chip
RF IN
RF OUT
Ground
(Back of Chip)
Gate Supply
Vg1&4
Gate Supply
Vg2&3
Output Power
Detector Voltage
Vdet*
*Note: Detector delivers 0.1 V DC into 3k Ω load resistor for >+7 dBm output power. If output power level detection is not desired, do not make
connection to detector bond pad.
Figure 2
Chip Layout and
Bond Pad Locations
(Chip Size=2.85 mm
x 1.2 mm. Back of
Chip is RF and DC
Ground)0
Dimensions in mm
0.0 0.2485
1.2
0.768
0.6135
0.459
1.1215
1.642
2.352
2.85
1.2
0.820
0.6655
0.511
www.raytheon.com/micro
0.0
0.0
0.921
2.119
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 2
0.0
2.85
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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