PJP168ACZ Просмотр технического описания (PDF) - Promax Johnton

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PJP168ACZ

PNP Epitaxial Silicon DarlingtonTransistor

Promax Johnton 

PJP168A

PNP Epitaxial Silicon DarlingtonTransistor

MEDIUM PO WER LINEAR SWITCHING APPLICATIO NS

• Collector current 18A

• Collector dissipation Pc =100W (Tc = 25℃ )

ORDERING INFORMATION

Device

PJP168ACZ

Operating Temperature

-20℃～+85℃

Package

T O-220

TO-220

P in : 1. Base

2. Collector

3. Emitter

ABSOLUTE MAXIMUM RATINGS (Ta = 25 ℃)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

Ic

Pc

Tj

T stg

ELECTRICAL CHARACTERISTICS (Ta = 25℃)

Characteristic

Collector-Base Breakdown Voltage

Collector-EmitterBreakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE1

hFE2

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

VCE (SAT)

VBE (SAT)

Rating

Unit

-20

V

-13

V

-7

V

-18

A

100

W

150

℃

-55 ~150

℃

Test Condition Min Typ Max Unit

Ic = -1mA, IE = 0

-20

V

Ic = -10mA, IB =0 -13

V

IE = -1mA, IC = 0

-7

V

VCB= -15V,IE=0

-100 μA

VEB= -3V,IC=0

-100 μA

VCE= -3V,IC=-10A 120

VCE= -3V,IC = -

90

15A

IC= -10A,IB= -1A

-0.7

V

IC= -10A, VCE= -

-1.5

V

4V

1-3

2002/01.rev.A

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