7MBR75U2B060 Просмотр технического описания (PDF) - Fuji Electric
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7MBR75U2B060 Datasheet PDF : 7 Pages
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IGBT Module
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
175
VGE=20V 15V 12V
150
125
100
10V
75
50
25
0
0
8V
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
175
Tj=25°C Tj=125°C
150
125
100
75
50
25
0
0
1
2
3
4
Collector-Emitter voltage : VCE [ V ]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
10.00
Cies
Coes
1.00
Cres
0.10
0.01
0
10
20
30
Collector-Emitter voltage : VCE [ V ]
7MBR75U2B060
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
175
VGE=20V 15V 12V
150
125
100
10V
75
50
8V
25
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
2
Ic=150A
Ic=75A
Ic=37.5A
0
5
10
15
20
25
Gate-Emitter voltage : VGE [ V ]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=75A, Tj= 25°C
500
25
400
20
300
15
VGE
200
10
100
0
0
5
VCE
50 100 150 200 250
Gate charge : Qg [ nC ]
0
300
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