7MBR100SB060 Просмотр технического описания (PDF) - Fuji Electric
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7MBR100SB060 Datasheet PDF : 7 Pages
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IGBT Modules
Characteristics (Representative)
7MBR100SB060
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25 oC (typ.)
250
15V
12V
VGE= 20V
200
150
100
50
10V
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
250
Tj= 25 oC
Tj= 125 oC
200
150
100
50
0
0
1
2
3
4
Collector - Emitter voltage : VCE [ V ]
50000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
10000
Cies
5000
1000
500
0
5
10
15
20
25
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
30
35
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125 oC (typ.)
250
VGE= 20V
15V
12V
200
150
100
10V
50
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25 oC (typ.)
10
8
6
4
2
0
5
500
Ic=200A
Ic=100A
Ic= 50A
10
15
20
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=100A, Tj= 25 oC
25
25
400
20
300
15
200
10
100
5
0
0
0
100
200
300
400
500
600
Gate charge : Qg [ nC ]
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