76009D Просмотр технического описания (PDF) - Fairchild Semiconductor

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76009D

20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs

Fairchild Semiconductor 

HUF76009P3, HUF76009D3S

Typical Performance Curves (Continued)

200

100

100µs

10

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

SINGLE PULSE

TJ = MAX RATED TC = 25oC

1

1

10

1ms

10ms

50

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

40

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VDD = 15V

30

20

10

TJ = 150oC

TJ = 25oC

TJ = -55oC

0

2

3

4

5

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 6. TRANSFER CHARACTERISTICS

40

VGS = 10V

30

20

VGS = 5V

VGS = 4.5V

TC = 25oC

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VGS = 4V

10

VGS = 3.5V

VGS = 3V

0

0

1

2

3

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 7. SATURATION CHARACTERISTICS

60

PULSE DURATION = 80µs

ID = 16A

DUTY CYCLE = 0.5% MAX

50

TC = 25oC

ID = 5A

40

ID = 10A

30

20

10

2

4

6

8

10

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.6

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

1.4

1.2

1.0

0.8

0.6

-80

VGS = 10V, ID = 20A

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1.2

VGS = VDS, ID = 250µA

1.0

0.8

0.6

-80

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

©2001 Fairchild Semiconductor Corporation

HUF76009P3, HUF76009D3S Rev. B

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