74V2G03(2003) Просмотр технического описания (PDF) - STMicroelectronics

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74V2G03
(Rev.:2003)

DUAL 2-INPUT OPEN DRAIN NAND GATE

STMicroelectronics 

74V2G03

DUAL 2-INPUT OPEN DRAIN NAND GATE

s HIGH SPEED: tPD = 3.9ns (TYP.) at VCC = 5V

s LOW POWER DISSIPATION:

ICC = 1µA(MAX.) at TA = 25°C

s HIGH NOISE IMMUNITY:

VNIH = VNIL = 28% VCC (MIN.)

s POWER DOWN PROTECTION ON INPUTS

s OPERATING VOLTAGE RANGE:

VCC(OPR) = 2V to 5.5V

s IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2G03 is an advanced high-speed CMOS

DUAL 2-INPUT OPEN DRAIN NAND GATE

fabricated with sub-micron silicon gate and

double-layer metal wiring C2MOS technology.

The internal circuit is composed of 3 stages

including buffer output, which provide high noise

immunity and stable output.

The device can, with an external pull-up resistor,

be used in wired AND configuration. This device

SOT23-8L

ORDER CODES

PACKAGE

SOT23-8L

T&R

74V2G03STR

can also be used as a led driver in any other

application requiring current sink.

Power down protection is provided on all inputs

and 0 to 7V can be accepted on inputs with no

regard to the supply voltage. This device can be

used to interface 5V to 3V.

PIN CONNECTION AND IEC LOGIC SYMBOLS

June 2003

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