74LVC3G06 Просмотр технического описания (PDF) - Philips Electronics
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74LVC3G06 Datasheet PDF : 15 Pages
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Philips Semiconductors
12. Dynamic characteristics
Table 9: Dynamic characteristics
GND = 0 V; see Figure 7 for test circuit.
Symbol Parameter
Conditions
Tamb = −40 °C to +85 °C [1]
tPLZ, tPZL
propagation delay see Figure 6
input nA to output nY VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V
VCC = 3.0 V to 3.6 V
VCC = 4.5 V to 5.5 V
CPD
power dissipation VCC = 3.3 V
capacitance per gate
Tamb = −40 °C to +125 °C
tPLZ, tPZL
propagation delay see Figure 6
input nA to output nY VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V
VCC = 3.0 V to 3.6 V
VCC = 4.5 V to 5.5 V
[1] All typical values are measured at Tamb = 25 °C and nominal VCC.
[2] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = number of inputs switching;
∑(CL × VCC2 × fo) = sum of the outputs.
[3] The condition is VI = GND to VCC.
74LVC3G06
Triple inverter with open-drain output
Min
Typ
Max
Unit
1.0
2.6
6.5
ns
0.5
1.6
3.9
ns
1.0
2.2
4.2
ns
0.5
2.0
3.4
ns
0.5
1.4
2.9
ns
[2] [3] -
5.9
-
pF
1.0
-
0.5
-
1.0
-
0.5
-
0.5
-
8.2
ns
4.9
ns
5.3
ns
4.3
ns
3.7
ns
9397 750 14541
Product data sheet
Rev. 03 — 01 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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