74HC253 Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
Список матч
74HC253 Datasheet PDF : 17 Pages
| |||
NXP Semiconductors
74HC253; 74HCT253
Dual 4-input multiplexer; 3-state
Table 7. Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); For test circuit see Figure 8.
Symbol Parameter
Conditions
25 °C
tt
transition time
CPD
power dissipation
capacitance
74HCT253
tpd
propagation delay
ten
enable time
tdis
disable time
tt
transition time
CPD
power dissipation
capacitance
see Figure 6
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
per multiplexer;
VI = GND to VCC
1ln to 1Y or 2ln to 2Y;
see Figure 6
VCC = 4.5 V
VCC = 5.0 V; CL = 15 pF
Sn to nY; see Figure 6
VCC = 4.5 V
VCC = 5.0 V; CL = 15 pF
nOE to nY; VCC = 4.5 V; see
Figure 7
nOE to nY; VCC = 4.5 V;
see Figure 7
VCC = 4.5 V; see Figure 6
per multiplexer;
VI = GND to VCC
[1] tpd is the same as tPHL, tPLH.
[2] ten is the same as tPZH, tPZL.
[3] tdis is the same as tPHZ, tPLZ.
[4] tt is the same as tTHL, tTLH.
[5] CPD is used to determine the dynamic power dissipation (PD in μW).
PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
∑(CL × VCC2 × fo) = sum of outputs.
Typ
[4]
14
5
4
[5] 55
Max
60
12
10
-
[1]
20
38
17
-
22
40
19
-
[2] 14
30
[3] 13
30
5
12
[5] 55
-
−40 °C to
+85 °C
Max
−40 °C to Unit
+125 °C
Max
75
90 ns
15
18 ns
13
15 ns
pF
48
57 ns
-
ns
50
60 ns
ns
38
45 ns
38
45 ns
15
18 ns
pF
74HC_HCT253_3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 22 April 2010
© NXP B.V. 2010. All rights reserved.
8 of 17
Share Link: 