74HC1G86 Просмотр технического описания (PDF) - Philips Electronics
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74HC1G86 Datasheet PDF : 12 Pages
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Philips Semiconductors
2-input EXCLUSIVE-OR gate
Product specification
74HC1G86;
74HCT1G86
DC CHARACTERISTICS FOR THE 74HC1G
Over recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Tamb (°C)
SYMBOL
PARAMETER
−40 to +85
−40 to +125
MIN. TYP.(1) MAX. MIN. MAX.
VIH
HIGH-level input
voltage
1.5 1.2
−
3.15 2.4
−
1.5
−
3.15 −
4.2 3.2
−
4.2
−
VIL
LOW-level input voltage −
0.8
0.5
−
0.5
−
2.1
1.35 −
1.35
−
2.8
1.8
−
1.8
VOH
HIGH-level output
1.9 2.0
−
voltage; all outputs
4.4 4.5
−
1.9
−
4.4
−
5.9 6.0
−
5.9
−
VOH
HIGH-level output
voltage; standard
outputs
4.13 4.32 −
5.63 5.81 −
3.7
−
5.2
−
VOL
LOW-level output
−
0
0.1
−
0.1
voltage; all outputs
−
0
0.1
−
0.1
−
0
0.1
−
0.1
VOL
LOW-level output
voltage; standard
outputs
−
0.15 0.33 −
0.4
−
0.16 0.33 −
0.4
II
input leakage current −
−
1.0
−
1.0
ICC
quiescent supply
current
−
−
10
−
20
TEST CONDITIONS
UNIT
VCC (V)
OTHER
V 2.0
V 4.5
V 6.0
V 2.0
V 4.5
V 6.0
V 2.0
V 4.5
V 6.0
V 4.5
V 6.0
V 2.0
V 4.5
V 6.0
V 4.5
V 6.0
µA 6.0
µA 6.0
VI = VIH or VIL;
−IO = 20 µA
VI = VIH or VIL;
−IO = 2.0 mA
VI = VIH or VIL;
−IO = 2.6 mA
VI = VIH or VIL;
IO = 20 µA
VI = VIH or VIL;
IO = 2.0 mA
VI = VIH or VIL;
IO = 2.6 mA
VI = VCC or GND
VI = VCC or GND;
IO = 0
Note
1. All typical values are measured at Tamb = 25 °C.
1998 Aug 05
5
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