VS-60EPU02-N3(2019) Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-60EPU02-N3 Datasheet PDF : 6 Pages
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www.vishay.com
VS-60EPU02-N3, VS-60APU02-N3
Vishay Semiconductors
70
IF = 90 A
60
IF = 60 A
IF = 30 A
50
40
30
20
VR = 160 V
10 TJ = 125 °C
TJ = 25 °C
0
100
1000
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
800
VR = 160 V
700 TJ = 125 °C
TJ = 25 °C
600
500
IF = 30 A
400
IF = 60 A
IF = 90 A
300
200
100
0
100
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
1000
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
di(rec)M/dt (5)
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
0.75 IRRM
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 29-Nov-2019
4
Document Number: 94021
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