3SK249 Просмотр технического описания (PDF) - Toshiba

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3SK249

Silicon N-Channel Dual Gate MOS Type Field Effect Transistor

Toshiba 

3SK249

TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type

3SK249

TV Tuner, UHF RF Amplifier Applications

Unit: mm

· Superior cross modulation performance.

· Low reverse transfer capacitance: Crss = 20 fF (typ.)

· Low noise figure.: NF = 1.5dB (typ.)

Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Gate 1-source voltage

Gate 2-source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Symbol

VDS

VG1S

VG2S

ID

PD

Tch

Tstg

Rating

Unit

12.5

V

±8

V

±8

V

30

mA

100

mW

125

°C

-55~125

°C

Electrical Characteristics (Ta = 25°C)

JEDEC

―

JEITA

―

TOSHIBA

2-2K1B

Weight: 0.006 g (typ.)

Characteristics

Gate 1 leakage current

Gate 2 leakage current

Drain-source voltage

Drain current

Gate 1-source cut-off voltage

Gate 2-source cut-off voltage

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Power gain

Noise figure

Symbol

Test Condition

Min Typ. Max Unit

IG1SS

VDS = 0, VG1S = ±6 V, VG2S = 0

¾

¾

±50

nA

IG2SS

VDS = 0, VG1S = 0, VG2S = ±6 V

¾

¾

±50

nA

V (BR) DSX

VG1S = -0.5 V, VG2S = -0.5 V

ID = 100 mA

12.5 ¾

¾

V

IDSS

VDS = 6 V, VG2S = 4.5 V, VG1S = 0 V

0

¾

0.1 mA

VG1S (OFF) VDS = 6 V, VG2S = 4.5 V, ID = 100 mA

0.4

0.9

1.4

V

VG2S (OFF) VDS = 6 V, VG1S = 4.0 V, ID = 100 mA

0.5

1.0

1.5

V

ïYfsï

VDS = 6 V, VG2S = 4.5 V, ID = 10 mA,

f = 1 kHz

17

21

¾

mS

Ciss

VDS = 6 V, VG2S = 4.5 V, ID = 10 mA,

0.9

1.5

2.1

pF

Crss

f = 1 MHz

¾

20

40

fF

Gps

VDS = 6 V, VG2S = 4.5 V, ID = 10 mA,

18

20

¾

dB

NF

f = 800 MHz

¾

1.5 2.5

dB

1

2003-04-04

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