33977 Просмотр технического описания (PDF) - Freescale Semiconductor
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33977 Datasheet PDF : 37 Pages
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 4.75 V < VDD < 5.25 V, and - 40°C < TA< 125°C, unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER OUTPUT (SIN-, SIN+, COS-, COS+) (Continued)
Microstep Full Step Output (Measured from Coil Low Side to Ground)
SIN± (COS±) IOUT = 30 mA
Output Flyback Clamp (11)
Output Current Limit (Output - VST6)
Overtemperature Shutdown (12)
Overtemperature Hysteresis (12)
CONTROL I/O (SI, SCLK, CS, RST, SO)
Input Logic High Voltage (12)
Input Logic Low Voltage (12)
Input Logic Voltage Hysteresis (12)
Input Logic Pull-Down Current (SI, SCLK)
Input Logic Pull-Up Current (CS, RST)
SO High State Output Voltage (IOH = 1.0 mA)
SO Low State Output Voltage (IOL = 1.6 mA)
SO Tri-State Leakage Current (CS = 3.5 V)
Input Capacitance (13)
SO Tri-State Capacitance (13)
ANALOG TO DIGITAL CONVERTER (RTZ ACCUMULATOR COUNT)
ADC Gain (12), (14)
VLS
VFB
ILIM
TSD
THYST
VIH
VIL
VINHYST
IDWN
IUP
VSOH
VSOL
ISOLK
CIN
CSO
GADC
V
0.0
0.1
0.3
–
VST6 + 0.5 VST6 + 1.0
V
40
100
170
mA
155
–
180
°C
8.0
–
16
°C
2.0
–
–
V
–
–
0.8
V
–
100
–
mV
3.0
–
20
µA
5.0
–
20
µA
0.8 VDD
–
–
V
–
0.2
0.4
V
-5.0
0.0
5.0
µA
–
4.0
12
pF
–
–
20
pF
100
188
270
Counts/V/
ms
Notes
11. Outputs remain active; however, the reduction in drive voltage may result in a loss of position control.
12. This parameter is guaranteed by design; however, it is not production tested.
13. Capacitance not measured. This parameter is guaranteed by design; however, it is not production tested.
14. Reference RTZ Accumulator (Typical) on page 30
33977
6
Analog Integrated Circuit Device Data
Freescale Semiconductor
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