2SK3376TV Просмотр технического описания (PDF) - Toshiba

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2SK3376TV

Silicon N Channel Junction Type Field Effect Transistor

Toshiba 

2SK3376TV

Electrical Characteristics (BK-Rank IDSS Ta=25°C)

Characteristic

Symbol

Test Condition

Min Typ. Max Unit

Drain Current

IDSS VDS = 2 V, VGS = 0

150

⎯

350

µA

Drain Current

ID

VDD = 2 V, RL= 2kΩ,Cg = 3pF

⎯

⎯

390

µA

Gate-Source Cut-off Voltage VGS(OFF) VDS = 2 V, ID = 1μA

-0.125 ⎯ -1.1 V

Forward transfer admittance |Yfs| VDS = 2 V,VGS = 0V

0.7 1.4

⎯

mS

Input capacitance

Ciss VDS = 2 V, VGS = 0, f = 1 MHz

⎯

5.5

⎯

pF

Voltage Gain

Gv VDD = 2V, RL= 2kΩ,Cg = 3pF, f = 1kHz

-12.0 ⎯ -7.50 dB

Delta Voltage Gain

DGv(f) VDD = 2V, RL= 2kΩ,Cg = 3pF,f = 1kHz to 100Hz

⎯

⎯ -2.0 dB

Delta Voltage Gain

DGv(V) VDD = 2V to 1V, RL= 2kΩ,Cg = 3pF,f = 1kHz

⎯

⎯ -13.5 dB

Noise Voltage

VN

VDD = 2V, RL= 1kΩ,Cg = 3pF,Gv=80dB,f=A-Curve ⎯

Filter

⎯

65

mV

3

2007-11-01

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