2SK3466 Просмотр технического описания (PDF) - Toshiba
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2SK3466 Datasheet PDF : 6 Pages
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2SK3466
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3466
Chopper Regulator
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.)
· High forward transfer admittance: ïYfsï = 4.0 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)
· Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Thermal Characteristics
Rating
Unit
500
V
500
V
±30
V
5
A
20
50
W
180
mJ
5
A
5
mJ
150
°C
-55 to 150
°C
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
Characteristics
Symbol
Max
Unit
4
Thermal resistance, channel to case
Rth (ch-c)
2.5
°C/W
Note 1: Please use devises on condition that the channel temperature
1
is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, RG = 25 W,
IAR = 5 A
3
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-02-06
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