2SK3371 Просмотр технического описания (PDF) - Toshiba
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2SK3371 Datasheet PDF : 6 Pages
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2SK3371
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Gate-source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
Symbol
Test Condition
Min
IGSS
VGS = ±25 V, VDS = 0 V
⎯
V (BR) GSS IG = ±10 μA, VDS = 0 V
±30
IDSS
VDS = 600 V, VGS = 0 V
⎯
V (BR) DSS ID = 10 mA, VGS = 0 V
600
Vth
VDS = 10 V, ID = 1 mA
2.0
RDS (ON) VGS = 10 V, ID = 0.5 A
⎯
⎪Yfs⎪
VDS = 10 V, ID = 0.5 A
0.4
Ciss
⎯
Crss
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯
Coss
⎯
tr
10 V
VGS
ton
0V
tf
ID = 0.5 A VOUT
⎯
⎯
RL = 600 Ω
⎯
toff
VDD ≈ 300 V
Duty ≤ 1%, tw = 10 μs
⎯
Qg
⎯
Qgs
VDD ≈ 400 V, VGS = 10 V, ID = 1 A
⎯
Qgd
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
6.4
0.85
190
15
55
12
55
40
90
9
3.5
5.5
Max
±10
⎯
100
⎯
4.0
9.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
μA
V
μA
V
V
Ω
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
Pulse drain reverse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 1 A, VGS = 0 V
IDR = 1 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
1
A
⎯
⎯
2
A
⎯
⎯
−1.7
V
⎯
400
⎯
ns
⎯
1.4
⎯
μC
Marking
K3371
Note 4: A line under a Lot No. identifies the indication of product Labels.
Part No.
(or abbreviation code)
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Lot No.
Please contact your TOSHIBA sales representative for details as to environmental
Note 4
matters such as the RoHS compatibility of Product. The RoHS is the Directive
2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic
equipment.
2
2010-02-05
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