2SK3310(2002) Просмотр технического описания (PDF) - Toshiba
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| 2SK3310 Datasheet PDF : 0 Pages | |||
2SK3310
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate -source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
ïYfsï
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 mA, VDS = 0 V
VDS = 450 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 5 A
VDS = 10 V, ID = 5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
¾
¾
±10
mA
±30
¾
¾
V
¾
¾
100
mA
450
¾
¾
V
3.0
¾
5.0
V
¾
0.48 0.65
W
1.5
4.3
¾
S
¾
920
¾
¾
12
¾
pF
¾ 140 ¾
tr
VG1S0 V
0V
ton
ID = 5 A
¾
25
VOUT
¾
¾
35
¾
RL = 40 W
ns
tf
¾
10
¾
VDD ~- 200 V
toff
Duty <= 1%, tw = 10 ms
¾
60
¾
Qg
Qgs
VDD ~- 360 V, VGS = 10 V, ID = 10 A
Qgd
¾
23
¾
¾
9
¾
nC
¾
14
¾
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
¾
¾
IDR = 10 A, VGS = 0 V
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/ms
Min Typ. Max Unit
¾
¾
10
A
¾
¾
40
A
¾
¾
-1.7
V
¾
280
¾
ns
¾
2.7
¾
mC
Marking
K3310
※
Type
※ Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
2
2002-09-04
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