2SK3405 Просмотр технического описания (PDF) - NEC => Renesas Technology
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2SK3405 Datasheet PDF : 8 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
18
16
14
VGS = 4.5 V
12
10
7.0 V
8
10 V
6
4
2
0
−50
0
50
100
150
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
1000
Ciss
Coss
Crss
100
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1
10
100
ISD - Diode Forward Current - A
2SK3405
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
VGS = 10 V
100
4.5 V 0 V
10
1
0.1
0.010
0.5
1
1.5
VSD - Source to Drain Voltage - V
1000
SWITCHING CHARACTERISTICS
100
tf
td(on)
10
td(off)
tr
VDD = 10 V
VGS = 10 V
1
RG = 10 Ω
0.1
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
18
12
ID = 48 A
15
VDD = 16 V
10 V
12
4V
8
9
VGS
6
4
3
VDS
0
0
0
10
20
30
40
QG - Gate Charge - nC
4
Data Sheet D14639EJ2V0DS
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