2SK3385 Просмотр технического описания (PDF) - NEC => Renesas Technology

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2SK3385

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC => Renesas Technology 

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3385

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK3385 is N-Channel MOS Field Effect Transistor

designed for high current switching applications.

ORDERING INFORMATION

PART NUMBER

2SK3385

PACKAGE

TO-251

FEATURES

• Low On-state Resistance

5 RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 15 A)

RDS(on)2 = 45 mΩ MAX. (VGS = 4.0 V, ID = 15 A)

• Low Ciss : Ciss = 1500 pF TYP.

• Built-in Gate Protection Diode

• TO-251/TO-252 package

2SK3385-Z

TO-252

(TO-251)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage

VDSS

60

V

Gate to Source Voltage

VGSS

±20

V

Drain Current (DC)

5 Drain Current (Pulse) Note1

5 Total Power Dissipation (TC = 25°C)

ID(DC)

ID(pulse)

PT

±30

A

±100

A

36

W

Total Power Dissipation (TA = 25°C)

PT

1.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

5 Single Avalanche Current Note2

5 Single Avalanche Energy Note2

Tstg

–55 to +150 °C

IAS

22

A

EAS

48

mJ

(TO-252)

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %

2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V

THERMAL RESISTANCE

5 Channel to Case

Channel to Ambient

Rth(ch-C)

Rth(ch-A)

3.47

°C/W

125

°C/W

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D14472EJ1V0DS00 (1st edition)

The mark 5 shows major revised points.

Date Published January 2000 NS CP(K)

©

Printed in Japan

1999,2000

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