K2586 Просмотр технического описания (PDF) - Renesas Electronics
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K2586 Datasheet PDF : 8 Pages
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2SK2586
Static Drain to Source on State
Resistance vs. Temperature
0.04
Pulse Test
0.032
0.024
0.016
VGS = 4 V
ID = 50 A
10, 20 A
0.008
0
–40
10 V
0
40
10, 20, 50 A
80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
5000
2000
1000
500
200
100
50
20
10
5
0.1 0.3
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
100
20
ID = 50 A
80
16
VDD = 10 V
25 V
60 VDS
50 V
12
VGS
40
8
20
VDD = 50 V
4
25 V
10 V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
500
VDS = 10 V
200 Pulse Test
100
50
Tc = –25°C
20
10
25°C
5
75°C
2
1
0.5
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
5000
2000
1000
Ciss
Coss
500
Crss
200 VGS = 0
100 f = 1 MHz
0
10
20 30 40
50
Drain to Source Voltage VDS (V)
Switching Characteristics
5000
2000
1000
500
200
100
50
td(off)
tf
tr
td(on)
20
10
5
0.1 0.3
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
1 3 10 30 100
Drain Current ID (A)
Rev.5.00 Sep 07, 2005 page 4 of 7
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